tpsma6.8 thru tpsma43a www.vishay.com vishay general semiconductor revision: 17-dec-12 1 document number: 88405 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount par ? transient voltage suppressors high temperature stability an d high reliability conditions typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. features ? junction passivation optimized design passivated anisotropic rectifier technology ?t j = 185 c capability suitable for high reliability and automotive requirement ? available in uni-directional polarity only ? 400 w peak pulse power capability with a 10/1000 s waveform, repetitive ra te (duty cycle): 0.01 % ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 mechanical data case: do-214ac (sma) ? molding compound meets ul 94 v-0 flammability rating base p/nhe3 - rohs-complia nt, aec-q101 qualified base p/nhe3_x - rohs-comp liant and aec-q101 qualified (_x denotes revision code e.g. a, b, .....) terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) mounted on pcb with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads attached to each terminal (3) measured on 8.3 ms single half sine-wave or equi valent square wave, duty cycle = 4 pulses per minutes maximum (4) mounted on minimum r ecommended pad layout primary characteristics v wm 5.5 v to 36.8 v v br 6.8 v to 43 v p ppm 400 w p d 1.0 w i fsm 40 a t j max. 185 c polarity uni-directional package do-214ac (sma) do-214ac ( s ma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak power dissipa tion with a 10/1000 s waveform (1)(2) (fig. 3) p ppm 400 w peak power pulse current with a 10/1000 s waveform (1) (fig. 1) i ppm see next table a power dissipation at t a = 25 c (4) p d 1.0 w peak forward surge current 8. 3 ms single ha lf sine-wave (3) i fsm 40 a maximum instantaneous forward voltage at 25 a (3) v f 3.5 v operating junction and storage temperature range t j , t stg - 65 to + 185 c
tpsma6.8 thru tpsma43a www.vishay.com vishay general semiconductor revision: 17-dec-12 2 document number: 88405 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) v br measured after i t applied for 300 s, i t = square wave pu lse or equivalent (2) surge current waveform per fi g. 3 and derated per fig. 2 (3) all terms and symbols are cons istent with ansi/ieee c62.35 electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v br (1) at i t (v) test current i t (ma) stand- off voltage v wm (v) maximum reverse leakage at v wm i r (a) t j = 150 c maximum reverse leakage at v wm i d (a) maximum peak pulse surge current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) min. max. tpsma6.8 adp 6.12 7.48 10 5.50 300 1000 37.0 10.8 tpsma6.8a aep 6.45 7.14 10 5.80 300 1000 38.1 10.5 tpsma7.5 afp 6.75 8.25 10 6.05 150 500 34.2 11.7 tpsma7.5a agp 7.13 7.88 10 6.40 150 500 35.4 11.3 tpsma8.2 ahp 7.38 9.02 10 6.63 50 200 32.0 12.5 tpsma8.2a akp 7.79 8.61 10 7.02 50 200 33.1 12.1 tpsma9.1 alp 8.19 10.00 1.0 7.37 10 50 29.0 13.8 tpsma9.1a amp 8.65 9.55 1.0 7.78 10 50 29.9 13.0 TPSMA10 anp 9.00 11.00 1.0 8.10 5.0 20 26.7 15.0 TPSMA10a app 9.50 10.50 1.0 8.65 5.0 20 27.6 14.5 tpsma11 aqp 9.90 12.10 1.0 8.92 1.0 5.0 24.7 16.2 tpsma11a arp 10.50 11.60 1.0 9.40 1.0 5.0 25.6 15.6 tpsma12 asp 10.80 13.20 1.0 9.72 1.0 5.0 23.1 17.3 tpsma12a atp 11.40 12.60 1.0 10.20 1.0 5.0 24.0 16.7 tpsma13 aup 11.70 14.30 1.0 10.50 1.0 5.0 21.1 19.0 tpsma13a avp 12.40 13.70 1.0 11.10 1.0 5.0 22.0 18.2 tpsma15 awp 13.50 16.30 1.0 12.10 1.0 5.0 18.2 22.0 tpsma15a axp 14.30 15.80 1.0 12.80 1.0 5.0 18.9 21.2 tpsma16 ayp 14.40 17.60 1.0 12.90 1.0 5.0 17.0 23.5 tpsma16a azp 15.20 16.80 1.0 13.60 1.0 5.0 17.8 22.0 tpsma18 bdp 16.20 19.80 1.0 14.50 1.0 5.0 15.1 26.5 tpsma18a bep 17.10 18.90 1.0 15.30 1.0 5.0 15.9 25.5 tpsma20 bfp 18.00 22.00 1.0 16.20 1.0 5.0 13.7 29.1 tpsma20a bgp 19.00 21.00 1.0 17.10 1.0 5.0 14.4 27.7 tpsma22 bhp 19.80 24.20 1.0 17.80 1.0 5.0 12.5 31.9 tpsma22a bkp 20.90 23.10 1.0 18.80 1.0 5.0 13.1 30.6 tpsma24 blp 21.60 26.40 1.0 19.40 1.0 5.0 11.5 34.7 tpsma24a bmp 22.80 25.20 1.0 20.50 1.0 5.0 12.0 33.2 tpsma27 bnp 24.30 29.70 1.0 21.80 1.0 5.0 10.2 39.1 tpsma27a bpp 25.70 28.40 1.0 23.10 1.0 5.0 10.7 37.5 tpsma30 bqp 27.00 33.00 1.0 24.30 1.0 5.0 9.2 43.5 tpsma30a brp 28.50 31.50 1.0 25.60 1.0 5.0 9.7 41.4 tpsma33 bsp 29.70 36.30 1.0 26.80 1.0 5.0 8.4 47.0 tpsma33a btp 31.40 34.70 1.0 28.20 1.0 5.0 8.8 45.7 tpsma36 bup 32.40 39.60 1.0 29.10 1.0 5.0 7.7 52.0 tpsma36a bvp 34.20 37.80 1.0 30.80 1.0 5.0 8.0 49.9 tpsma39 bwp 35.10 42.90 1.0 31.60 1.0 5.0 7.1 56.4 tpsma39a bxp 37.10 41.00 1.0 33.30 1.0 5.0 7.4 53.9 tpsma43 byp 38.70 47.30 1.0 34.80 1.0 5.0 6.5 61.9 tpsma43a bzp 40.90 45.20 1.0 36.80 1.0 5.0 6.7 59.3
tpsma6.8 thru tpsma43a www.vishay.com vishay general semiconductor revision: 17-dec-12 3 document number: 88405 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - peak pulse power rating curve fig. 2 - pulse power or current vs. initial junction temperature fig. 3 - pulse waveform fig. 4 - typical junction capacitance ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode tpsma6.8ahe3/61t (1) 0.064 61t 1800 7" diameter plastic tape and reel tpsma6.8ahe3/5at (1) 0.064 5at 7500 13" diameter plastic tape and reel tpsma6.8ahe3_a/h (1) 0.064 h 1800 7" diameter plastic tape and reel tpsma6.8ahe3_a/i (1) 0.064 i 7500 13" diameter plastic tape and reel 0.1 1.0 10 100 0. 2x 0.2" (5. 0x 5.0 mm) copper pad areas p ppm - peak power (kw) t d - pulse width (s) non-repetitive pulse waveform shown in fig. 3 t a = 25 c 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms 0 50 100 100 75 50 25 0 150 200 t j - initial temperature (c) peak pulse power (p pp ) or current (i pp ) derating in percentage, % td 0 50 100 150 t r = 10 s peak value i ppm half value - i ppm i pp 2 t d 10/1000 s waveform as defined by r.e.a. 0 1.0 2.0 3.0 4.0 t - time (ms) i ppm - peak pulse current, % i rsm t j = 25 c pulse width (t d ) is defined as the point where the peak current decays to 50 % of i ppm 10 100 1000 10 000 1 10 100 junction capacitance (pf) v br - breakdown voltage (v) t j = 25 c f = 1.0 mhz v sig = 50 mvp-p v r measured at zero bias v r measured at stand-off, v wm
tpsma6.8 thru tpsma43a www.vishay.com vishay general semiconductor revision: 17-dec-12 4 document number: 88405 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum non-repetitive peak forward surge current ? package outline dimensions in inches (millimeters) 200 100 10 1 5 10 50 100 50 t j = t j max. 8.3 ms single half sine-wave number of cycles at 60 hz peak forward surge current (a) 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pad layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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